Current progress towards reducing light-induced degradation in a-Si:H films and solar cells
1987; Elsevier BV; Volume: 22; Issue: 4 Linguagem: Inglês
10.1016/0379-6787(87)90057-3
ISSN1878-2655
AutoresHiroshi Sakai, Yoshiaki Uchida,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoThe present state of a-Si:H solar cells and studies on the light-induced effects in a-Si:H films and a-Si:H solar cells are presented. The conversion efficiencies attained are 11.5%, 10.1% and 8.1% (8.7% in the active area) for 1.0 cm2 single-junction and multijunction cells and a 1200 cm2 submodule respectively. The density of light-induced defects, Δ Ns, chages with deposition temperature and annealing temperature. This suggests a strong correlation between Δ Ns and the network structure in a-Si:H films. Field testing results indicate that the degradation of a-Si:H modules can be suppressed to within 10% of the original efficiency after 2 years operation. It is also indicated that multijunction cells are more stable to light exposure than single-junction p-i-n cells.
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