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Temperature-Dependent Reaction of rf Hydrogen Plasma with Silicon

1994; Institute of Physics; Volume: 33; Issue: 8A Linguagem: Inglês

10.1143/jjap.33.l1117

1347-4065

Yong Sun, Ryusuke Nishitani, Tatsuro Miyasato,

Semiconductor materials and devices

The reaction of rf hydrogen plasma with silicon has been studied by characterizing the reaction products as a function of silicon target temperature (80–300° C), hydrogen gas pressure (20–200 Pa) and rf power (50–400 W). It was found that the reaction rate of rf hydrogen plasma with silicon increased at temperatures below 200° C. Major products in the reaction are SiH 2 and SiH 3 species, and their sputtering rates depend strongly on the silicon target temperature rather than plasma density under the present sputtering conditions. The temperature dependence can be explained in terms of the chemical reaction rate of hydrogen with silicon and the surface density of adsorbed hydrogen on the silicon surface. The plasma bombardment effects on the reaction rate and the desorption rate of adsorbed hydrogen are also discussed.