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Band structure of indium phosphide from near-band-gap photoemission

1991; American Physical Society; Volume: 44; Issue: 15 Linguagem: Inglês

10.1103/physrevb.44.7999

1095-3795

Jacques Peretti, H.-J. Drouhin, D. Paget, A. Mircéa,

Advanced Chemical Physics Studies

Energy analysis of the electrons photoemitted from p-type doped (100) InP crystals is performed with 20-meV resolution, at 120 K. The samples are activated to low electron affinity. Laser excitation in the photon energy range 1.96\ensuremath{\le}h\ensuremath{\nu}\ensuremath{\le}3.53 eV is used. The locations of the subsidiary minima ${\mathit{L}}_{6}$ and ${\mathit{X}}_{6}$ of the first conduction band and ${\mathit{X}}_{7\mathit{c}}$ of the second one are unambiguously measured (respectively, 0.67, 0.90, and 1.18 eV above the bottom of the conduction band). The energy dispersion of the three upper valence bands and of the first conduction band is probed over a large portion of the Brillouin zone. These experimental results are accurately described in the framework of the k\ensuremath{\cdot}p Kane model and the value of the spin-orbit-split-band mass ${\mathit{m}}_{7}$=(0.19\ifmmode\pm\else\textpm\fi{}0.01)${\mathit{m}}_{0}$ (where ${\mathit{m}}_{0}$ is the free-electron mass) is directly obtained.