Portal de Periódicos da CAPES

Electrical properties of the amorphous semiconducting Se-Te-In system

1988; Elsevier BV; Volume: 103; Issue: 2-3 Linguagem: Inglês

10.1016/0022-3093(88)90208-6

1873-4812

Ashok B. Gadkari, J.K. Zope,

Chalcogenide Semiconductor Thin Films

The measurement of DC electrical conductivity and thermoelectric power of the bulk samples of chalcogenide glasses of the system Se70-Te30, Se70-Te30−xInx (x = 1, 3, 5, 7, 9% atomic weight) are studied. The activation energies are obtained from conductivity and thermoelectric power measurements, using Mott, Davis and Fritzsche equations. The difference of activation energies EQ = Eσ∗ − Es∗ = 0.12 eV is explained on the basis of long range electrostatic potential fluctuations, and this difference in activation energies is in agreement with the results reported by Overhof and Beyer for the chalcogenides. And it has also been observed that addition of indium in the samples increases the electrical conductivity.