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Low-temperature growth morphology of singular and vicinal Ge(001)

1998; American Physical Society; Volume: 57; Issue: 19 Linguagem: Inglês

10.1103/physrevb.57.12536

1095-3795

J. E. Van Nostrand, S. Jay Chey, David G. Cahill,

Photonic Crystals and Applications

Scanning tunneling microscopy is used to study the nonequilibrium surface morphology of singular and vicinal Ge(001) grown by molecular-beam epitaxy. Growth on substrates with $\ensuremath{\approx}0.1\ifmmode^\circ\else\textdegree\fi{}$ miscut produces patterns of nearly symmetrical growth mounds over a wide range of growth temperature, $60<T<230\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ and film thickness, $0.5<h {k}_{B}T)$ at ascending steps. Buffer layers grown at $T=365\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ on vicinal substrates (9\ifmmode^\circ\else\textdegree\fi{} miscut towards [110]) show (115) facets. Low-temperature growth on vicinal surfaces (6\ifmmode^\circ\else\textdegree\fi{} and 9\ifmmode^\circ\else\textdegree\fi{} miscuts at $T=155$ and 230 \ifmmode^\circ\else\textdegree\fi{}C) produces highly anisotropic growth ridges oriented along the miscut direction with larger roughness amplitude and smaller in-plane length scales than mounds produced by the same growth conditions on singular substrates. At 230 \ifmmode^\circ\else\textdegree\fi{}C, the slopes of the growth ridges are stabilized by the (105) surface.