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Band offsets for the silicon nitride/amorphous silicon interface: Implications for charge transport and trapping in silicon nitride

1987; Elsevier BV; Volume: 97-98; Linguagem: Inglês

10.1016/0022-3093(87)90214-6

1873-4812

W. B. Jackson, M. D. Moyer, C. C. Tsai, Jessica Marshall,

Silicon Nanostructures and Photoluminescence

Threshold voltage shift measurements of silicon nitride/hydrogenated amorphous silicon devices demonstrate that electron accumulation primarily creates interface states while hole accumulation results in bulk trapped holes. This asymmetry in transport can readily be explained by the band structure as determined by recent electron spectroscopy measurements and band tailing within the nitride.