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Ion bombardment of resists

1983; Elsevier BV; Volume: 209-210; Linguagem: Inglês

10.1016/0167-5087(83)90785-8

1872-9606

I. Adesida,

Diamond and Carbon-based Materials Research

The general characteristics and applications of ion bombardment of resists are described. The emphasis in applications is paid mostly to the lithography aspect because of the tremendous interest that has recently been generated by the development of new ion sources. Chemical events such as chain scission and crosslinking induced by ionizing radiation are described. The G value which is the number of chemical events (scissions) associated with proton energy dissipation in polymethyl methacrylate (PMMA) is measured to be 0.70. The applications of conventional ion beam lithography to range measurements in polymers and microstructure fabrication are presented. The technique of ion beam inhibited etching and its application to microfabrication are also described.