Electrodeposition of nanoscale silicon in a room temperature ionic liquid
2004; Elsevier BV; Volume: 6; Issue: 5 Linguagem: Inglês
10.1016/j.elecom.2004.03.013
ISSN1873-1902
AutoresSherif Zein El Abedin, Natalia Borissenko, Frank Endres,
Tópico(s)Molecular Junctions and Nanostructures
ResumoIn this letter we report for the first time that silicon can be well electrodeposited on the nanoscale in the room temperature ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide saturated with SiCl4. This liquid exhibits on highly oriented pyrolytic graphite (HOPG) an electrochemical window of 4 V, which is limited in the anodic regime by the degradation of HOPG, in the cathodic regime by the irreversible reduction of the organic cation. A silicon layer with a thickness of 100 nm exhibits a band gap of 1.0 ± 0.2 eV, which is shown by in situ current/voltage tunneling spectroscopy, indicating that semiconducting silicon was electrodeposited.
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