Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply
2014; Institute of Electrical and Electronics Engineers; Volume: 62; Issue: 2 Linguagem: Inglês
10.1109/ted.2014.2361165
ISSN1557-9646
AutoresMietek Bakowski, Per Ranstad, Jang‐Kwon Lim, Wlodek Kaplan, Sergey A. Reshanov, Adolf Schöner, Florian Giezendanner, Anton Ranstad,
Tópico(s)Advanced DC-DC Converters
Resumo10 kV, 2 A SiC p-i-n diodes have been designed and fabricated. The devices feature excellent stability of forward characteristics and robust junction termination with avalanche capability of 1 J. The fabricated diodes have been electrically evaluated with respect to dynamic ON-state voltage, reverse recovery behavior, bipolar stability, and avalanche capability. More than 60% reduction of losses has been demonstrated using newly developed 10-kV p-i-n diodes in a multikilowatt high voltage, high-frequency dc/dc soft-switching converter.
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