Carrier concentration and activation energy in heavily donor‐doped silicon
1987; American Institute of Physics; Volume: 61; Issue: 2 Linguagem: Inglês
10.1063/1.338210
ISSN1520-8850
Autores Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoThe Lee–McGill [J. Appl. Phys. 46, 373 (1975)] model for computing the populations in heavily doped n-type silicon is applied with several objectives. First, it is used to evaluate Neumark’s [Phys. Rev. B 5, 408 (1972(; J. Appl. Phys. 48, 3618 (1977)] expressions for screening and for the decrease of the activation energy in such systems. Next, it is used to systematically investigate the decrease in activation energy as doping density increases. Lastly, it is used to evaluate the adequacy of using dilute concentration statistics to fit experimental data.
Referência(s)