Fabrication of nano-size conic diamond arrays by bias assisted PCVD
1999; Elsevier BV; Volume: 8; Issue: 2-5 Linguagem: Inglês
10.1016/s0925-9635(98)00420-8
ISSN1879-0062
AutoresYih-Trong Jan, Hui-Chen Hsieh, Chia‐Fu Chen,
Tópico(s)Ion-surface interactions and analysis
ResumoThis study successfully fabricates gate conic diamond field emission arrays on the Si wafer utilizing a two-step deposition method by bias-assisted microwave plasma chemical vapor deposition (BAMPCVD) system. The 4 inch n-type silicon wafer is used as the substrate. In addition, a set of arrays of circular patterns (8 μm radius) is exposed using a micro-electronic technique. The conic diamonds are deposited in the patterns as well. Experimental results indicate that the negative bias voltage improves the conic diamond's density and shape. Various methane concentrations also affect the conic diamond's quality, size, growth rate and I–V characteristics. Restated, the amorphous carbon increases with an increasing methane concentration, thereby enhancing the emission current as well. Moreover, with the various methane concentrations, the vertical and horizontal growth rates differ from each other. Furthermore, the horizontal growth rate is faster than the vertical one when increasing the methane concentration. Owing to this reason, the radius of conic diamond's apex can be increased with an increasing methane concentration.
Referência(s)