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Resonant Raman scattering by LO phonons in the presence of a static magnetic field

1976; American Physical Society; Volume: 13; Issue: 12 Linguagem: Inglês

10.1103/physrevb.13.5420

0556-2805

S. Frota-Pessôa, Roberto Luzzi,

Thin-Film Transistor Technologies

Resonant Raman scattering from LO phonons in the presence of a constant magnetic field is considered. We calculate the differential extinction coefficient, including effects of the electron-phonon interaction, for a doped semiconductor. It is shown that significant deviations from the Lorentzian line shape may appear due to hybridization of the phonon mode with the cyclotron modes, when for certain geometries, a harmonic of the cyclotron frequency is approximately equal to the LO-phonon frequency. An application is made for GaAs.