Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces
2010; American Institute of Physics; Volume: 96; Issue: 16 Linguagem: Inglês
10.1063/1.3368701
ISSN1520-8842
AutoresK. Yamane, Kohei Hamaya, Yasunobu Ando, Yoshihisa Enomoto, Keisuke Yamamoto, Taizoh Sadoh, Masanobu Miyao,
Tópico(s)Semiconductor materials and devices
ResumoWe study electrical properties of metal/Ge contacts with an atomically controlled interface, and compare them with those with a disordered one, where atomically controlled interfaces can be demonstrated by using Fe3Si/Ge(111) contacts. We find that the Schottky barrier height of Fe3Si/n-Ge(111) contacts is unexpectedly lower than those induced by the strong Fermi-level pinning at other metal/n-Ge contacts. For Fe3Si/p-Ge(111) contacts, we identify clear rectifying behavior in I-V characteristics at low temperatures, which is also different from I-V features due to the strong Fermi-level pinning at other metal/p-Ge contacts. These results indicate that there is an extrinsic contribution such as dangling bonds to the Fermi-level pinning effect at the directly connected metal/Ge contacts.
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