Photostimulated evaporation of SiO2 films by synchrotron radiation
1990; American Institute of Physics; Volume: 57; Issue: 22 Linguagem: Inglês
10.1063/1.104167
ISSN1520-8842
AutoresHousei Akazawa, Y. Utsumi, Junichi Takahashi, T. Urisu,
Tópico(s)Advanced Surface Polishing Techniques
ResumoIrradiation by synchrotron radiation on SiO2 films induces continuous removal of this material at elevated temperatures. The photostimulated evaporation rate for a thermally grown SiO2 film increases steeply with temperature giving an activation energy of 0.7 eV. The experimental results indicate that photon-induced bond breaking assists decomposition and thermal desorption of the film. Applications to microfabrication of a line-and-space pattern and low-temperature cleaning of Si(100) surface are demonstrated.
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