Electrically active defects in liquid phase epitaxial interfaces in the In0.53Ga0.47As/InP system
1987; Elsevier BV; Volume: 83; Issue: 2 Linguagem: Inglês
10.1016/0022-0248(87)90011-x
ISSN1873-5002
AutoresPeter Whitney, Clifton G. Fonstad,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoThe electrical properties of liquid phase epitaxial interfaces in the lattice-matched In0.53Ga0.47As/InP system were studied using C−V profiling and capacitance transient spectroscopy. The measurements indicate a high density of acceptor-like electron traps about 0.10 eV below the conduction band in a highly localized region in the immediate vicinity of LPE n-In0.53Ga0.47As/N-InP isotype heterojunctions. The complete absence of these traps in the interface between two successively grown InP layers, and between two successively grown In0.53Ga0.47As layers indicates that the defects are formed during the initial stages of heteroepitaxy. Possible origins of this electron trap are discussed.
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