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Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

2012; American Institute of Physics; Volume: 101; Issue: 3 Linguagem: Inglês

10.1063/1.4737158

1520-8842

L. Liu, Jing-Ping Xu, F. Ji, J. X. Chen, P. T. Lai,

Ferroelectric and Negative Capacitance Devices

Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH3-annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO2 interface.