Suppression of short step bunching generated on 4H–SiC Si-face substrates with vicinal off-angle
2014; Elsevier BV; Volume: 401; Linguagem: Inglês
10.1016/j.jcrysgro.2014.02.037
ISSN1873-5002
AutoresK. Masumoto, Kentaro Tamura, Chiaki Kudou, Johji Nishio, Sachiko Ito, Kazutoshi Kojima, Toshiyuki Ohno, Hajime Okumura,
Tópico(s)Silicon and Solar Cell Technologies
ResumoAbstract We report on an attempt to suppress the short step bunching (SSB) generated on substrates with a vicinal off-angle during an increase in the temperature of H2-atmosphere treatment prior to epitaxial growth. The relationship between etching depth and SSB density was investigated by adding SiH4 or C3H8 and varying the H2 flow rate. We found that etching depth and SSB density decreased when SiH4 was added and the H2 flow rate was reduced; the SSB density decreased to one-tenth of that obtained under usual conditions. In contrast, the SSB density increased when C3H8 was added, although the etching depth decreased. We discuss differences between adding SiH4 or C3H8 and reducing the H2 flow rate. We conclude that it is important to not only decrease the etching depth but also inhibit the etching reactions so that SSB generation can be suppressed.
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