Effects of intrinsic ZnO buffer layer based on P3HT/PCBM organic solar cells with Al-doped ZnO electrode
2009; Elsevier BV; Volume: 93; Issue: 6-7 Linguagem: Inglês
10.1016/j.solmat.2008.11.033
ISSN1879-3398
AutoresSungeun Park, Sung Ju Tark, Joon Sung Lee, Heejin Lim, Donghwan Kim,
Tópico(s)Perovskite Materials and Applications
ResumoOrganic solar cell devices were fabricated using poly(3-hexylthiophene) (P3HT) and 6,6-phenyl C61-butyric acid methyl ester (PCBM), which play the role of an electron donor and acceptor, respectively. The transparent electrode of organic solar cells, indium tin oxide (ITO), was replaced by Al-doped ZnO (AZO). ZnO has been studied extensively in recent years on account of its high optical transmittance, electrical conduction and low material cost. This paper reports organic solar cells based on Al-doped ZnO as an alternative to ITO. Organic solar cells with intrinsic ZnO inserted between the P3HT/PCBM layer and AZO were also fabricated. The intrinsic ZnO layer prevented the shunt path in the device. The performance of the cells with a layer of intrinsic ZnO was superior to that without the intrinsic ZnO layer.
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