Electrical memory switching in Langmuir-Blodgett films
1989; Elsevier BV; Volume: 179; Issue: 1-2 Linguagem: Inglês
10.1016/0040-6090(89)90175-2
ISSN1879-2731
AutoresK Sakai, Hiroki Kawada, Osamu Takamatsu, Hiro Matsuda, Ken Eguchi, T. Nakagiri,
Tópico(s)Electrochemical Analysis and Applications
ResumoAbstract Electrical memory switching has been observed in the metal/Langmuir-Blodgett (LB) film/metal sandwich structure with a noble metal base electrode. Switching from a non-conducting OFF state to a conducting ON state (WRITE operation) and/or switching back to the OFF state (ERASE) are/is possible by applying adequate voltage; however, when the voltage is reduced, both OFF and ON states remain the same. A memory system utilizing an LB film and a scanning tunnelling microscope, has been proposed.
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