Dependence of lattice parameter on elastic strain and composition in undoped Czochralski grown GaAs
1986; American Institute of Physics; Volume: 48; Issue: 15 Linguagem: Inglês
10.1063/1.96628
ISSN1520-8842
AutoresYasumasa Okada, Yozo Tokumaru, Yoshinori Kadota,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoBy precise measurement of the spatial variation in the lattice parameters of {001} undoped Czochralski grown gallium arsenide wafers, it was found that the lattice parameters are strongly dependent upon elastic strain and not so much on the melt composition. Although a remarkable spatial variation in the lattice parameters of ±5×10−6 nm from the average value was observed in a wafer specimen, the variation was considerably reduced to ±2×10−6 nm by dividing the wafer into small specimens. The lattice parameter variation was smaller than 2×10−6 nm due to a change in the As composition ratio from 0.42 to 0.52 in the melt.
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