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Simulation of carrier capture in quantum well lasers due to strong inelastic scattering

1995; Elsevier BV; Volume: 18; Issue: 3 Linguagem: Inglês

10.1006/spmi.1995.1106

1096-3677

Leonard F. Register, K. Hess,

Semiconductor Quantum Structures and Devices

The effects of strong inelastic scattering on carrier transport over and capture into the quantum wells of quantum well lasers are simulated. In contrast to most semiconductor devices, strong scattering is beneficial to the operation of quantum well lasers. However, such strong inelastic scattering in nanostructures can be expected to produce intermediate degrees of phase coherence, limiting the applicability of both classical models, such as Bethe thermionic emission theory, and commonly used quantum mechanical treatments, such as Fermi's Golden Rule. Two computational approaches are demonstrated for simulating such transport with intermediate degrees of phase coherence. First, absorbing potentials are used within Schrödinger's equation to represent inelastic scattering. This simple approach both exhibits much of the essential physics of such transport and is computationally efficient. Then a more rigorous approach, Schrödinger equation (based) Monte Carlo (SEMC), is demonstrated. While SEMC is rigorously quantum mechanical, the numerical algorithm has more in common with semiclassical Monte Carlo methods than path integral-based quantum Monte Carlo methods. Both of these methods demonstrate nonlinear variations in carrier capture with variations in scattering, and the destruction of quantum resonances for transmission over the quantum well.