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Determination of gap state density in polycrystalline silicon by field-effect conductance

1986; American Institute of Physics; Volume: 49; Issue: 16 Linguagem: Inglês

10.1063/1.97460

1520-8842

G. Fortunato, P. Migliorato,

Silicon Nanostructures and Photoluminescence

We have obtained the density of states (DOS) in polycrystalline silicon from the analysis of the field-effect conductance. The DOS exhibits a U-shaped distribution with an exponential band tail. The method is very sensitive and accounts for the effect of film morphology and differences in device processing (e.g., post-hydrogenation).