p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)
2011; American Chemical Society; Volume: 11; Issue: 5 Linguagem: Inglês
10.1021/nl104536x
ISSN1530-6992
AutoresHieu Pham Trung Nguyen, S. Zhang, Kai Cui, Xing Han, Saeed Fathololoumi, Martin Couillard, Gianluigi A. Botton, Zetian Mi,
Tópico(s)Metal and Thin Film Mechanics
ResumoFull-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were monolithically grown on Si(111) by molecular beam epitaxy, with the emission characteristics controlled by the dot properties in a single epitaxial growth step. With the use of p-type modulation doping in the dot-in-a-wire heterostructures, we have demonstrated the most efficient phosphor-free white LEDs ever reported, which exhibit an internal quantum efficiency of ∼56.8%, nearly unaltered CIE chromaticity coordinates with increasing injection current, and virtually zero efficiency droop at current densities up to ∼640 A/cm(2). The remarkable performance is attributed to the superior three-dimensional carrier confinement provided by the electronically coupled dot-in-a-wire heterostructures, the nearly defect- and strain-free GaN nanowires, and the significantly enhanced hole transport due to the p-type modulation doping.
Referência(s)