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Characterization of deep level traps responsible for isolation of proton implanted GaAs

2003; American Institute of Physics; Volume: 93; Issue: 6 Linguagem: Inglês

10.1063/1.1554761

1520-8850

H. Boudinov, Artur Vicente Pfeifer Coelho, Hark Hoe Tan, C. Jagadish,

Ion-surface interactions and analysis

Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250 °C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ∼0.64 eV.