Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
2004; Trans Tech Publications; Volume: 457-460; Linguagem: Inglês
10.4028/www.scientific.net/msf.457-460.213
ISSN1662-9760
AutoresYuuki Ishida, Tomoyuki Takahashi, Kazutoshi Kojima, Hajime Okumura, Kazuo Arai, Sadafumi Yoshida,
Tópico(s)Advanced ceramic materials synthesis
Referência(s)