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Magnetically Excited Plasma Oxynitridation of Si at Room Temperature

1995; Institute of Physics; Volume: 34; Issue: 8A Linguagem: Inglês

10.1143/jjap.34.l955

1347-4065

Yoshinaga Okamoto Yoshinaga Okamoto, H. Nagasawa, Daiske Kitayama Daiske Kitayama, Hiroyasu Kitajima Hiroyasu Kitajima, Hideaki Ikoma,

Semiconductor materials and devices

Good electrical quality Si oxynitride was successfully grown at room temperature using magnetically excited ( N 2 + Ar) plasma. Si oxynitride, probably Si\SubtN\SubtO, was grown only when Ar was mixed with N 2 , while SiO\Subt was solely formed with N 2 only. At the top surface of the grown film with mixed gas, SiO\Subt was always grown due to residual oxygen in N 2 gas, so that the SiO\Subt/Si\Subt N 2 O structure was always obtained. Good capacitance-voltage characteristics were obtained although the growth rate was somewhat low. The ( N 2 + Ar) plasma treatment after deposition of Si\SubsN\Subf powder on Si was also discussed.