Phthalocyanine-based field-effect transistor as ozone sensor
2001; Elsevier BV; Volume: 73; Issue: 1 Linguagem: Inglês
10.1016/s0925-4005(00)00682-1
ISSN1873-3077
AutoresMarcel Bouvet, G. Guillaud, Arnaud Leroy, André Maillard, S. Spirkovitch, François-Genès Tournilhac,
Tópico(s)Molecular Junctions and Nanostructures
ResumoIn this paper, we present a new sensor, which exhibits a sensitivity to ozone to less than 10 ppb. The device is a phthalocyanine-based field-effect transistor which is capable of working at room temperature. We describe a dynamic procedure, working out of the equilibrium state, to get rid of drift phenomena. A process where 2 min exposure alternates with 8 min static rest period leads, after a conditioning period, to a stable and reproducible signal. The response of the device (55 pA ppb−1 min−1) is linearly correlated to the ozone concentration in air, in the range 0–150 ppb. The use of a dynamic rest (flow of ozone free air) instead of a static rest reduces the duration of the recovery period, but is not necessary to achieve a good reproducibility.
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