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Low-voltage breakdown of the quantum Hall state in a laterally constricted two-dimensional electron gas

1986; American Physical Society; Volume: 34; Issue: 2 Linguagem: Inglês

10.1103/physrevb.34.1384

1095-3795

J. R. Kirtley, Z. Schlesinger, Thomas Theis, F. P. Milliken, S. L. Wright, L. F. Palmateer,

Semiconductor materials and devices

We have observed controlled, low-voltage breakdown of the quantum Hall state in $\mathrm{GaAs}\ensuremath{-}{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ heterostructures with lateral constrictions a few micrometers in width. The breakdown characteristics show an onset of dissipation at voltages corresponding to the cyclotron energy for even filling factors. Analysis of these results in terms of a simple model implies that the dissipation process involves interlevel as well as intralevel scattering, and therefore that large potential gradients are present in the two-dimensional electron gas.