High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature
2000; American Institute of Physics; Volume: 76; Issue: 23 Linguagem: Inglês
10.1063/1.126644
ISSN1520-8842
AutoresKohki Mukai, Yoshiaki Nakata, Koji Otsubo, Mitsuru Sugawara, Naoki Yokoyama, Hiroshi Ishikawa,
Tópico(s)Photonic and Optical Devices
ResumoThis letter reports on the high characteristic temperature of InGaAs/GaAs quantum-dot lasers at room temperature. Self-assembled quantum dots were grown using low-growth-rate molecularbeam epitaxy, and continuous-wave lasing occurred at the dot ground level of 1.26 μm at 25 °C. The characteristic temperature of the threshold currents was 120 K, and ground-level lasing was observed up to 100 °C. Comparing the lasing performances and the spontaneous emission spectra with those of 1.3 μm emission dots, we found that the large volume density, deep potential, and high quantum efficiency were key points for improving the temperature characteristics.
Referência(s)