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High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

2007; Elsevier BV; Volume: 310; Issue: 7-9 Linguagem: Inglês

10.1016/j.jcrysgro.2007.11.152

1873-5002

Kentaro Nagamatsu, Narihito Okada, Hiroki Sugimura, Hirotoshi Tsuzuki, Fumiaki Mori, Kazuyoshi Iida, Akira Bando, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki,

ZnO doping and properties

Ultraviolet light-emitting diodes (UV-LEDs) with a peak wavelength of 335 nm were fabricated on AlN/sapphire templates. As templates for the fabrication of UV-LEDs, planar AlN and epitaxial laterally overgrown (ELO) AlN on sapphire (0 0 0 1) substrates were compared. The output power of UV-LEDs grown on ELO-AlN was 27 times higher than that of UV-LEDs on the planar AlN template.