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Fine structure of acceptor-bound phonons in Raman spectra of ZnTe

1985; American Physical Society; Volume: 31; Issue: 8 Linguagem: Inglês

10.1103/physrevb.31.5343

1095-3795

M. Scagliotti, M. Jouanne, M. Bałkanski,

Chalcogenide Semiconductor Thin Films

Raman spectra were excited with the red and yellow lines of a ${\mathrm{Kr}}^{+}$ laser at low temperatures in ZnTe single crystals doped with Li (Zn), P (Te), and As (Te) acceptors. LO phonons bound to neutral impurities were clearly observed in the spectra of Li- and P-doped samples, and their temperature and polarization behavior were investigated. As expected for a local mode which is a mixture of vibrational and electronic excitations, the bound LO-phonon peaks decreased in the intensity-like electronic Raman bands as the temperature increased. Acceptor-bound LO phonons exhibit fine structure in Raman spectra. The experimental binding energies were found to be in satisfactory agreement with the values predicted by a theoretical model which takes into account the effects of the valence-band degeneracy on the acceptor-bound phonons.