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Improvement of SiO 2 /SiC Interface Properties by Nitrogen Radical Irradiation

2003; Institute of Physics; Volume: 42; Issue: Part 2, No. 6A Linguagem: Inglês

10.1143/jjap.42.l575

1347-4065

Yuusuke Maeyama, Hiroshi Yano, Y. Furumoto, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki,

Thin-Film Transistor Technologies

Effects of nitrogen (N) radical irradiation on SiO2/4H- and 6H-SiC interface properties were investigated. N radicals were irradiated to dry thermal oxides on SiC. X-ray photoelectron spectroscopy measurements revealed that N atoms were introduced into the SiO2/SiC interface with 1 at%. To evaluate the interface state density, high and low frequency capacitance - voltage characteristics were measured using n-type metal-oxide-semiconductor (MOS) structures. The interface state density was reduced by irradiation of N radicals. Thin oxides were found to be effective in reducing the interface state density. The channel mobility of n-channel inversion-mode MOS field-effect transistors was improved. The N atom incorporation gives a favorable effect for the improvement of SiO2/SiC interface properties.