Highly Stable ZnON Thin-Film Transistors With High Field-Effect Mobility Exceeding 50 <inline-formula> <tex-math notation="LaTeX">$\mathrm{cm}^{2}$ </tex-math></inline-formula>/Vs
2014; Institute of Electrical and Electronics Engineers; Volume: 36; Issue: 1 Linguagem: Inglês
10.1109/led.2014.2365614
ISSN1558-0563
AutoresKyung-Chul Ok, Hyun‐Jun Jeong, Hyun‐Suk Kim, Jin‐Seong Park,
Tópico(s)Semiconductor materials and devices
ResumoHigh-performance thin-film transistors (TFTs) based on ZnON channels were fabricated using a dc reactive sputtering method. To improve the photoinduced bias stability, a postannealing process was carried out at a low ambient pressure ( $\sim 100$ mTorr, air ambient) at 250 °C for various annealing times (1–5 h). The transfer characteristics of the postannealed ZnON TFTs exhibited an improved subthreshold swing ranging from 0.60 to 0.42 V/decade. Other transport properties remained similar including a high mobility ( $\mu _{\rm sat}$ ) of >50 $\mathrm{cm}^{2}$ /Vs, a threshold voltage ( $V_{\rm th}$ ) of −2.5 V, and an ON-OFF drain current ratio of $> 10^{8}$ . In addition, photoinduced bias reliability under a gate bias stress ( $V_{G} = -20$ V) was significantly improved from −10.88 V (1 h) to −2.28 V (5 h). These results can be explained by the enhancement of bonding properties between Zn metal and two different anions (O, N) as stable N–Zn–O states.
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