Microhardness of the AIBIIIC2VI ternary semiconductors and their solid solutions
1987; Wiley; Volume: 101; Issue: 2 Linguagem: Inglês
10.1002/pssa.2211010212
ISSN1521-396X
AutoresI. V. Bodnar, Б. В. Корзун, A. P. Chernyakova,
Tópico(s)Quantum Dots Synthesis And Properties
ResumoThe microhardness of eleven AIBIIICVI2 semiconducting compounds and thatof their CuGaS2xSe2(1−x), CuInS2xSe2(1−x), CuGaxIn1−xS2, CuGaxIn1−xSe2, and AgGaxIn1−xS2 solid solutions is experimentally studied in the plane (112). The functional dependences of the microhardness on the molar mass and the melting temperature are determined for the starting compounds in terms of which the microhardness values for all the AIBIIICVI2 compounds are estimated. The Debye temperatures of the AIBIIICVI2 compounds are calculated using the Madelung-Einstein and Linde-mann relations taking into account the microhardness and melting temperatures, respectively. It is established that the increasing metallicity of the compounds results in the decrease of their mechanical strength and thermal stability. The functional dependence of microhardness on composition is found for the solid solutions. It is established that the microhardness maximum is observed for the composition determined by the ratio of the molar masses of the starting compounds with \documentclass{article}\pagestyle{empty}\begin{document}$ x_{\max} = 1 - 2\frac{{\mu _1 - \mu _2}}{{\mu _1 + \mu _2}}. $\end{document}. The values of xmax and the maximum value of micrhardness for a number of solid solutions with one component substitution (anionic and cationic) are calculated on the basis of the AIBIIICVI2 ternary compounds. [Russian Text Ignored].
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