Sub-bandgap absorption in Ti implanted Si over the Mott limit
2011; American Institute of Physics; Volume: 109; Issue: 11 Linguagem: Inglês
10.1063/1.3596525
ISSN1520-8850
AutoresJ. Olea, A. del Prado, David Pastor, I. Mártil, G. González-Dı́az,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoWe have analyzed the structural and optical properties of Si implanted with very high Ti doses and subsequently pulsed-laser melted (PLM). After PLM, all samples exhibit an abrupt and roughly uniform, box-shaped Ti profile, with a concentration around 2 × 1020 cm−3, which is well above the Mott limit, within a 150 nm thick layer. Samples PLM-annealed at the highest energy density (1.8 J/cm2) exhibit good lattice reconstruction. Independent of the annealing energy density, in all of the samples we observe strong sub-bandgap absorption, with absorption coefficient values between 4 × 103 and 104 cm−1. These results are explained in terms of the formation of an intermediate band (IB) originated from the Ti deep levels.
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