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Free‐carrier transport in HgTe/CdTe superlattices

1988; American Institute of Physics; Volume: 6; Issue: 4 Linguagem: Inglês

10.1116/1.575507

1520-8559

C. A. Hoffman, J. R. Meyer, E. R. Youngdale, J. R. Lindle, F. J. Bartoli, J. W. Han, K. A. Harris, J. W. Cook, J. F. Schetzina,

Semiconductor Quantum Structures and Devices

Magnetotransport and phototransport measurements on molecular‐beam epitaxially grown HgTe/CdTe superlattices are discussed. A detailed analysis of the magnetic‐field‐dependent Hall data yields that mixed conduction by more than one carrier species is significant at all temperatures.The T dependence of the intrinsic carrier density has been used to characterize the band gap and the product of the electron and hole density‐of‐states effective masses. Hole mobilities >105 cm2/V s are reported, as well as the first observation of hole freezeout in a HgTe/CdTe superlattice. Photo‐Hall measurements employing CO2 laser irradiation to generate excess electrons and holes are shown to yield minority electron mobilities and free‐carrier lifetimes.