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A CdS:Sb photoelectrode for photoelectrochemical applications

1994; Institute of Physics; Volume: 27; Issue: 8 Linguagem: Inglês

10.1088/0022-3727/27/8/031

1361-6463

L.P. Deshmukh, S G Holikatti, P.P. Hankare,

Quantum Dots Synthesis And Properties

CdS:Sb thin film photoelectrodes with antimony doping concentration in the range from 0.005-0.5 wt.% have been prepared in an aqueous alkaline medium. Photo-electrochemical cells are then fabricated employing these films as an active photoelectrode and the sulphide/polysulphide redox couple as electrolyte. The electrical and optical properties of these cells have been examined under suitable conditions and evaluated in terms of various cell parameters such as isc, Voc, eta , ff, Rs, Rsh, nd Phi B and Vfb. It has been found that the cell performance is improved significantly after doping and it is optimum at 0.075 wt.% Sb doping level in CdS. The incremental enhancement in the various properties of a cell is explained on the basis of the modified electrical, optical and structural properties of the thin film compositions.