Ballistic electron emission luminescence spectroscopy of an InAs quantum dot heterostructure
2004; American Institute of Physics; Volume: 85; Issue: 11 Linguagem: Inglês
10.1063/1.1790595
ISSN1520-8842
AutoresWei Yi, Ian Appelbaum, Kasey J. Russell, V. Narayanamurti, M. Hanson, A. C. Gossard,
Tópico(s)Quantum and electron transport phenomena
ResumoWe present ballistic electron emission luminescence (BEEL) spectroscopy measurements of an InAs quantum dot (QD) heterostructure based on three-terminal hot electron injection using a scanning tunneling microscope (STM) and a planar tunnel-junction transistor. Due to higher injected current, the planar transistors allow us to perform wavelength spectroscopy of the emitted luminescence, which resolves both quantum-confined Stark-shifted QD luminescence near 1.34eV and bulk GaAs luminescence at 1.48eV. This facilitates interpretation of STM BEEL spectra as a function of collector voltage bias. By freezing out the collector leakage current at low temperatures, consistent collector-current spectra are acquired with both STM and planar transistors.
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