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Effect of lattice-misfit strain on the process-induced imprint behavior in epitaxial Pb(Zr0.52Ti0.48)O3 thin films

2004; American Institute of Physics; Volume: 85; Issue: 9 Linguagem: Inglês

10.1063/1.1786662

1520-8842

Wenbin Wu, Yu Wang, G. K. H. Pang, K. H. Wong, C. L. Choy,

Electronic and Structural Properties of Oxides

The effect of lattice-misfit strain on the process-induced imprint behavior in Pb(Zr0.52Ti0.48)O3 (PZT) capacitors with Pt (top), and SrRuO3, La0.7Sr0.3MnO3 or LaNiO3 (bottom) electrodes has been studied. With the different oxide electrodes and by changing the deposition oxygen pressure, various lattice-misfit strains in the epitaxial PZT films have been produced. It was found that after in situ annealing at reduced oxygen pressures, the capacitors showed an increased voltage offset in the polarization-electric field hysteresis loops with increasing the misfit strain, irrelevant to the oxide electrodes employed, while lattice disorder at the bottom interface can effectively eliminate the voltage shift. Our results suggest that the imprint behavior is caused by oxygen loss via dislocations generated by the misfit strain relaxation at the growth temperature.