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Spontaneous fluctuations of electricity in thermionic valves under retarding field conditions

1947; IOP Publishing; Volume: 59; Issue: 3 Linguagem: Inglês

10.1088/0959-5309/59/3/304

2051-2171

D. K. C. MacDonald, Reinhold Fürth,

Silicon Nanostructures and Photoluminescence

It follows from theoretical considerations that the shot effect in diodes should satisfy the classical formula of Schottky under extreme retarding-field conditions when the product IR of current and differential resistance of the valve reaches the constant value KT/e. It appears from the results of the experiments described in the present paper, that both relations are satisfied for currents not exceeding a certain critical value Ic. A theory is presented which permits calculation of Ic for a given valve structure. Finally, it is shown how measurements of this type can be used atisfactorily for determining the cathode temperatures in diodes.