A direct method of determining complex depth profiles of residual stresses in thin films on a nanoscale
2007; Elsevier BV; Volume: 55; Issue: 14 Linguagem: Inglês
10.1016/j.actamat.2007.05.002
ISSN1873-2453
AutoresS. Massl, Jozef Kečkéš, Reinhard Pıppan,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoA cantilever method of determining complex depth profiles of residual stresses is presented by means of a 840 nm thin Ni film on a Si substrate. The technique developed is based on the fabrication of a micro-cantilever and the subsequent gradual reduction of film thickness using a focused ion beam workstation. The deflection as a function of film thickness is measured directly from SEM images, and the stress distribution in the thin film is determined by means of a straightforward calculation procedure. The method can be applied to crystalline as well as amorphous materials and permits stress profiles on a nanoscale to be determined.
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