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Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations

2005; Institute of Physics; Volume: 44; Issue: 6L Linguagem: Inglês

10.1143/jjap.44.l806

1347-4065

Hidekazu Tsuchida, Isaho Kamata, Toshiyuki Miyanagi, Tomonori Nakamura, Koji Nakayama, Ryousuke Ishii, Yoshitaka Sugawara,

Semiconductor materials and interfaces

We investigate basal plane dislocations (BPDs) in thick 4H–SiC(0001) epilayers and the formation of stacking faults in the active region of pin diodes. Synchrotron reflection X-ray topography shows that epitaxial growth on (0001) is advantageous in preventing the propagation of BPDs from the substrate into the epilayer and obtaining a low BPD density in the epilayer compared with growth on (0001). The current stress test of 4H–SiC(0001) pin diodes demonstrates the suppressed formation of stacking faults.