Observation of persistent negative photoconductivity effect in AlGaAs/GaAs modulation-doped structures
1991; American Physical Society; Volume: 67; Issue: 21 Linguagem: Inglês
10.1103/physrevlett.67.3010
ISSN1092-0145
AutoresA. Powell, Chris Button, J. S. Roberts, Peter Rockett, H. G. Grimmeiss, Håkan Pettersson,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoWe report on the observation of a persistent ``negative'' photoconductivity effect exhibited in ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As/GaAs heterostructures over the temperature range 170T300 K. We believe this to be the first observation of persistent ``negative'' photoconductivity, particularly at these relatively high temperatures. A possible source of the phenomenon is discussed, and suggested to originate from an interaction between the two-dimensional electron gas and EL2 centers.
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