Fabrication and characterization of GaAs Schottky barrier photodetectors for microwave fiber optic links
1984; American Institute of Physics; Volume: 45; Issue: 3 Linguagem: Inglês
10.1063/1.95207
ISSN1520-8842
AutoresH. Blauvelt, G. D. Thurmond, J. D. Parsons, D. Kent Lewis, H.C. Yen,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoHigh-Speed GaAs Schottky barrier photodiodes have been fabricated and characterized. These detectors have 3-dB bandwidths of 20 GHz and quantum efficiencies as high as 70%. The response of the detectors to light modulated at 1–18 GHz has been directly measured. Microwave modulated optical signals were obtained by using a LiNbO3 traveling wave modulator and by heterodyning two laser diodes.
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