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Finite-element analysis of quantum wells of arbitrary semiconductors with arbitrary potential profiles

1989; IEEE Photonics Society; Volume: 25; Issue: 5 Linguagem: Inglês

10.1109/3.27977

1558-1713

Kentaro Nakamura, Akira Shimizu, M. Koshiba, K. Hayata,

Surface Roughness and Optical Measurements

A finite-element method for the analysis of eigenstates in a quantum well, which is based on the Galerkin procedure, is discussed. A general boundary condition of the envelope function at the heterointerface is introduced by using the transfer matrix. The validity of the method is confirmed by calculating the eigenstates of GaAs/AlGaAs and InAs/GaSb rectangular quantum wells. Numerical examples of voltage-applied quantum wells are presented.