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Influence of the manufacturing process on the electrical properties of thin (<4nm) Hafnium based high-k stacks observed with CAFM

2007; Elsevier BV; Volume: 47; Issue: 9-11 Linguagem: Inglês

10.1016/j.microrel.2007.07.045

1872-941X

Mario Lanza, M. Porti, M. Nafrı́a, Günther Benstetter, Werner Frammelsberger, H. Ranzinger, Edgar Lodermeier, G. Jaschke,

Advancements in Semiconductor Devices and Circuit Design

In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current–voltage (I–V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive.