Suppressed diffusion of boron and carbon in carbon-rich silicon
1998; American Institute of Physics; Volume: 73; Issue: 12 Linguagem: Inglês
10.1063/1.122244
ISSN1520-8842
AutoresH. Rücker, B. Heinemann, Wilfried Röpke, R. Kurps, D. Krüger, G. Lippert, H. J. Osten,
Tópico(s)Thin-Film Transistor Technologies
ResumoTransient enhanced diffusion of boron in silicon can be suppressed by substitutional carbon. We show here that diffusion of boron and carbon is strongly reduced in carbon-rich silicon, even when no supersaturation of interstitials due to implantation is present. Pronounced non-Fickian diffusion behavior was found for epitaxially grown-in carbon at concentrations well above its solid solubility. The experimentally observed suppression of B and C diffusion at high C concentrations is explained in terms of a recently proposed model that predicts an undersaturation of Si self-interstitials caused by diffusion of C out of C-rich regions.
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