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Directly modulated buried heterostructure DFB laser on SiO_2/Si substrate fabricated by regrowth of InP using bonded active layer

2014; Optica Publishing Group; Volume: 22; Issue: 10 Linguagem: Inglês

10.1364/oe.22.012139

1094-4087

Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka,

Semiconductor Quantum Structures and Devices

We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO₂/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO₂/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50°C. These results indicate that our fabrication method is a promising way to fabricate high-efficiency lasers at a low cost.