Growth process of CuO(111) and Cu2O(001) thin films on MgO(001) substrate under metal-mode condition by reactive dc-magnetron sputtering
2007; Elsevier BV; Volume: 81; Issue: 9 Linguagem: Inglês
10.1016/j.vacuum.2007.01.061
ISSN1879-2715
Autores Tópico(s)Electronic and Structural Properties of Oxides
ResumoThe growth process of CuO and Cu2O thin films on MgO(0 0 1) substrates by reactive dc-magnetron sputtering was studied by reflection high-energy electron diffraction (RHEED) and atomic-force microscopy (AFM). The RHEED pattern and AFM image showed that (1) three-dimensional Cu(0 0 1) islands grew on MgO under the nonreactive sputtering condition, (2) CuO(1 1 1) was deposited layer by layer on MgO at 400 °C under the reactive sputtering condition, and (3) the film deposited at 600 °C in the initial growth stage was composed of three-dimensional Cu islands because O2 gas could not be incorporated into them due to the low sticking coefficient of O2 on MgO under the reactive sputtering condition. The layer-by-layer CuO(1 1 1) thin-film growth process is discussed from the viewpoint that Cu and oxygen species are supplied in stoichiometry onto the MgO substrate to form CuO thin-film crystals while maintaining minimum interfacial energy between CuO and MgO.
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