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Investigation of fast and slow decays in InGaN/GaN quantum wells

2011; American Institute of Physics; Volume: 99; Issue: 8 Linguagem: Inglês

10.1063/1.3627166

1520-8842

Guan Sun, Guibao Xu, Yu‐Jie Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu,

Semiconductor Quantum Structures and Devices

We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.